advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 13.5m fast switching characteristics i d 40a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 3.4 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice 200727071-1/4 AP9466GS rohs-compliant product parameter rating drain-source voltage 40 gate-source voltage 20 continuous drain current, v gs @ 10v 40 continuous drain current, v gs @ 10v 25 pulsed drain current 1 150 total power dissipation 36.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.29 thermal data parameter storage temperature range g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-263(s) the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =26a - - 13.5 m v gs =4.5v, i d =16a - - 21 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =26a - 24.5 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =26a - 13.5 22 nc q gs gate-source charge v ds =32v - 2.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9.4 - nc t d(on) turn-on delay time 2 v ds =20v - 7 - ns t r rise time i d =26a - 73 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 20 - ns t f fall time r d =0.77 -8- ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf r g gate resistance f=1.0mhz - 1.3 2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =26a, v gs =0v - - 1.2 v t rr reverse recovery time i s =20a, v gs =0 v , - 27 - ns q rr reverse recovery charge di/dt=100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 AP9466GS this product has been qualified for consumer market. applications or uses as criterial component in life support
AP9466GS fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =26a v g =10v 0 30 60 90 120 150 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 8 12 16 20 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =26a t c =25 o c 0 20 40 60 80 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0.8 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP9466GS 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =24v v ds =32v i d =26a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 symbols advanced power electronics corp. package code part numbe r e b b1 e d l2 l3 c1 a a1 l4 c xxxxxs ywwsss a2 y last digit of the year ww week sss sequence package code part numbe r 9466gs ywwsss logo e b b1 e d l2 l3 c1 a a1 l4 c a2 date code (ywwsss) y last digit of the year ww week sss sequence meet rohs requirement
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